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november 2011 doc id 18467 rev 2 1/19 19 STD10NM60ND, stf10nm60nd stp10nm60nd n-channel 600 v, 0.57 ? , 8 a, dpak, to-220fp, to-220 fdmesh? ii power mosfet (with fast diode) features 100% avalanche tested low input capacitance and gate charge low gate input resistance extremely high dv/dt av alanche capabilities applications switching applications description this fdmesh? ii power mosfet with intrinsic fast-recovery body diode is produced using the second generation of mdmesh? technology. utilizing a new strip-layout vertical structure, this revolutionary device features extremely low on- resistance and superior switching performance. it is ideal for bridge topologies and zvs phase-shift converters. figure 1. internal schematic diagram order codes v dss @t j max r ds(on) max. i d p tot STD10NM60ND 650 v < 0.6 ? 8 a 70 w stf10nm60nd 25 w stp10nm60nd 70 w to-220 to-220fp 1 2 3 dpak 1 3 tab 1 2 3 tab !-v $4!" ' 3 table 1. device summary order codes marking package packaging STD10NM60ND 10nm60nd dpak tape and reel stf10nm60nd to-220fp tu b e stp10nm60nd to-220 www.st.com
contents STD10NM60ND, stf10nm60nd, stp10nm60nd 2/19 doc id 18467 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
STD10NM60ND, stf10nm60nd, stp10nm60nd electrical ratings doc id 18467 rev 2 3/19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit dpak to-220fp to-220 v ds drain-source voltage 600 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 8 8 (1) 1. limited by maximum junction temperature. 8a i d drain current (continuous) at t c = 100 c 5 5 (1) 5a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 32 32 (1) 32 a p tot total dissipation at t c = 25 c 70 25 70 w dv/dt (3) 3. i sd 8 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss . peak diode recovery voltage slope 40 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit dpak to-220fp to-220 r thj-case thermal resistance junction-case max 1.79 5 1.79 c/w r thj-amb thermal resistance junction-ambient max 62.50 62.50 c/w r thj-pcb thermal resistance junction-pcb max 50 c/w t j maximum lead temperature for soldering purpose 300 c/w table 4. avalanche characteristics symbol parameter value unit i as avalanche current, repetitive or not- repetitive (pulse width limited by tj max) 2.5 a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd =50 v) 130 mj
electrical characteristics STD10NM60ND, stf10nm60nd, stp10nm60nd 4/19 doc id 18467 rev 2 2 electrical characteristics (tcase =25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 4 a 0.57 0.6 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 577 32.4 1.76 - pf pf pf c oss eq (1) 1. c oss eq. time related is defined as a constant equival ent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 480 v, v gs = 0 - 138 - pf r g gate input resistance f=1 mhz open drain - 6 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 480 v, i d = 8 a, v gs = 10 v (see figure 19) - 20 4.3 11.6 - nc nc nc table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 300 v, i d = 4 a, r g = 4.7 ?, v gs = 10 v (see figure 18) - 9.2 10 32 9.8 - ns ns ns ns
STD10NM60ND, stf10nm60nd, stp10nm60nd electrical characteristics doc id 18467 rev 2 5/19 table 8. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 8 32 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 8 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 8 a, di/dt = 100 a/s v dd = 60 v (see figure 20) - 118 680 11 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 8 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 20) - 150 918 12 ns nc a
electrical characteristics STD10NM60ND, stf10nm60nd, stp10nm60nd 6/19 doc id 18467 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak figure 3. thermal impedance for dpak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-220 figure 7. thermal impedance for to-220 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 8 975v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 8 9 8 6v1 i d 10 1 0.1 0.01 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am0 8 974v1
STD10NM60ND, stf10nm60nd, stp10nm60nd electrical characteristics doc id 18467 rev 2 7/19 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy i d 6 4 2 0 0 10 v d s (v) 20 (a) 5 15 25 8 10 5v 6v 7v v g s =10v 3 0 12 14 am0 8 976v1 i d 6 4 2 0 0 4 v g s (v) 8 (a) 2 6 10 8 10 v d s =19v 12 14 am0 8 977v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =4 8 0v i d = 8 a 12 3 00 200 100 0 400 500 v d s am0 8 97 8 v1 r d s (on) 0.56 0.55 0.54 0.5 3 0 2 i d (a) ( ? ) 1 3 0.57 0.5 8 0.59 0.60 v g s =10v 5 4 6 7 8 am0 8 979v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am0 8 9 8 0v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 500 600 am0 8 9 8 1v1
electrical characteristics STD10NM60ND, stf10nm60nd, stp10nm60nd 8/19 doc id 18467 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized v ds vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am0 8 9 8 2v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 2.1 1.9 1.5 1.1 0.7 i d = 4 a am0 8 9 83 v1 v s d 0 4 i s d (a) (v) 2 6 8 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am0 8 9 8 5v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.02 1.04 1.06 i d =1ma 1.0 8 1.10 am0902 8 v1
STD10NM60ND, stf10nm60nd, stp10nm60nd test circuits doc id 18467 rev 2 9/19 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefo rm figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STD10NM60ND, stf10nm60nd, stp10nm60nd 10/19 doc id 18467 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
STD10NM60ND, stf10nm60nd, stp10nm60nd package mechanical data doc id 18467 rev 2 11/19 table 9. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
package mechanical data STD10NM60ND, stf10nm60nd, stp10nm60nd 12/19 doc id 18467 rev 2 figure 24. dpak (to-252) drawing figure 25. dpak footprint (a) a. all dimension ar e in millimeters 006 8 772_h 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
STD10NM60ND, stf10nm60nd, stp10nm60nd package mechanical data doc id 18467 rev 2 13/19 figure 26. to-220fp drawing table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data STD10NM60ND, stf10nm60nd, stp10nm60nd 14/19 doc id 18467 rev 2 . table 11. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
STD10NM60ND, stf10nm60nd, stp10nm60nd package mechanical data doc id 18467 rev 2 15/19 figure 27. to-220 type a drawing 00159 88 _typea_rev_ s
packaging mechanical data STD10NM60ND, stf10nm60nd, stp10nm60nd 16/19 doc id 18467 rev 2 5 packaging mechanical data table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
STD10NM60ND, stf10nm60nd, stp10nm60nd packaging mechanical data doc id 18467 rev 2 17/19 figure 28. tape for dpak (to-252) figure 29. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STD10NM60ND, stf10nm60nd, stp10nm60nd 18/19 doc id 18467 rev 2 6 revision history 12 table 13. document revision history date revision changes 10-feb-2011 1 first release. 17-nov-2011 2 updated features in table and description in cover page. updated table 2: absolute maximum ratings , table 5: on /off states , table 15: normalized on resistance vs temperature , figure 17: normalized v ds vs temperature and section 4: package mechanical data .
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